SL

Sang In Lee

Samsung: 76 patents #821 of 75,807Top 2%
VA Veeco Ald: 24 patents #1 of 11Top 10%
NF Nova Engineering Films: 10 patents #1 of 1Top 100%
SC S-Printing Solution Co.: 5 patents #23 of 396Top 6%
ST Synos Technology: 4 patents #1 of 2Top 50%
AL Aviza Technology Limited: 1 patents #19 of 62Top 35%
📍 Seoul, CA: #47 of 604 inventorsTop 8%
Overall (All Time): #9,775 of 4,157,543Top 1%
121
Patents All Time

Issued Patents All Time

Showing 76–100 of 121 patents

Patent #TitleCo-InventorsDate
7050937 Performance measurement system 2006-05-23
6576053 Method of forming thin film using atomic layer deposition method Yeong-kwan Kim, Young-Wook Park, Jae-Soon Lim, Sung-Je Choi 2003-06-10
6570253 Multi-layer film for a thin film structure and a capacitor using the same Jae-Soon Lim, Yeong-kwan Kim, Heung-Soo Park 2003-05-27
6478872 Method of delivering gas into reaction chamber and shower head used to deliver gas Yun-sook Chae, In-Sang Jeon, Sang-Bom Kang, Kyu Wan Ryu 2002-11-12
6391769 Method for forming metal interconnection in semiconductor device and interconnection structure fabricated thereby Jong-Myeong Lee, Hyun-Seok Lim, Byung-Hee Kim, Gil-Heyun Choi 2002-05-21
6376355 Method for forming metal interconnection in semiconductor device Mee-Young Yoon 2002-04-23
6372598 Method of forming selective metal layer and method of forming capacitor and filling contact hole using the same Sang-Bum Kang, Yun-sook Chae, Hyun-Seok Lim, Mee-Young Yoon 2002-04-16
6358829 Semiconductor device fabrication method using an interface control layer to improve a metal interconnection layer Mee-Young Yoon, Hyun-Seok Lim 2002-03-19
6284591 Formation method of interconnection in semiconductor device 2001-09-04
6270572 Method for manufacturing thin film using atomic layer deposition Yeong-kwan Kim, Chang-Soo Park, Sang Min Lee 2001-08-07
6211082 Chemical vapor deposition of tungsten using nitrogen-containing gas Bong-young Yoo, Byung-Lyul Park, Dae-hong Ko 2001-04-03
6207487 Method for forming dielectric film of capacitor having different thicknesses partly Yeong-kwan Kim, Chang-Soo Park, Young Sun Kim 2001-03-27
6197683 Method of forming metal nitride film by chemical vapor deposition and method of forming metal contact of semiconductor device using the same Sang-Bom Kang, Chang-Soo Park, Yun-sook Chae 2001-03-06
6180447 Methods for fabricating integrated circuit capacitors including barrier layers having grain boundary filling material Chang-Soo Park, Hong-ku Paik 2001-01-30
6174809 Method for forming metal layer using atomic layer deposition Sang-Bom Kang, Yun-sook Chae, Chang-Soo Park 2001-01-16
6156644 Method for forming interconnects for semiconductor devices using reaction control layers, and interconnects formed thereby Kwang Man Ko 2000-12-05
6144060 Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature In-seon Park, Yeong-kwan Kim, Byung-Hee Kim, Sang Min Lee, Chang-Soo Park 2000-11-07
6139700 Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device Sang-Bom Kang 2000-10-31
6140671 Semiconductor memory device having capacitive storage therefor 2000-10-31
6087257 Methods of fabricating a selectively deposited tungsten nitride layer and metal wiring using a tungsten nitride layer Byung-Lyul Park, Jung-Min Ha, Dae-hong Ko 2000-07-11
6013576 Methods for forming an amorphous tantalum nitride film Jae-Eung Oh, Chang-Soo Park 2000-01-11
6001660 Methods of forming integrated circuit capacitors using metal reflow techniques Young-soh Park, Cheol Seong Hwang, Doo-sup Hwang, Hag-Ju Cho 1999-12-14
6001683 Formation method of interconnection in semiconductor device 1999-12-14
5998870 Wiring structure of semiconductor device and method for manufacturing the same Sun Ho Ha 1999-12-07
5970309 Method of manufacturing a capacitor and a capacitor electrode in semiconductor device Jung-Min Ha, Byung-Lyul Park, Dae-hong Ko 1999-10-19