MK

Moo-Sung Kim

Samsung: 44 patents #2,302 of 75,807Top 4%
VU Versum Materials Us: 17 patents #15 of 174Top 9%
Air Products And Chemicals: 7 patents #288 of 1,997Top 15%
KT Korea Institute Of Science And Technology: 4 patents #514 of 3,491Top 15%
IN Intermolecular: 2 patents #139 of 248Top 60%
University Of Texas System: 1 patents #2,951 of 6,559Top 45%
📍 Goyang-si, AZ: #1 of 2 inventorsTop 50%
Overall (All Time): #23,206 of 4,157,543Top 1%
79
Patents All Time

Issued Patents All Time

Showing 1–25 of 79 patents

Patent #TitleCo-InventorsDate
12163224 Methods for depositing a conformal metal or metalloid silicon nitride film Xinjian Lei, Anupama Mallikarjunan, Aaron Dangerfield, Luis Fabián Peña, Yves Chabal 2024-12-10
12105585 Method of equalizing bit error rates of memory device Eun Chu Oh, Young Sik Kim, Yong Jun Lee, Jeong Ho Lee 2024-10-01
11742200 Composition and methods using same for carbon doped silicon containing films Haripin Chandra, Xinjian Lei, Anupama Mallikarjunan 2023-08-29
11732351 Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films Xinjian Lei, Jianheng Li 2023-08-22
11631580 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials Xinjian Lei, Matthew R. MacDonald, Se Won Lee 2023-04-18
11605535 Boron-containing compounds, compositions, and methods for the deposition of a boron containing films Xinjian Lei 2023-03-14
11440929 Bis(diazadiene)cobalt compounds, method of making and method of use thereof Alan Charles Cooper, Sergei Vladimirovich Ivanov, Christopher Hopkins 2022-09-13
11193206 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials Xinjian Lei, Matthew R. MacDonald, Se Won Lee 2021-12-07
11152206 Compositions and methods using same for carbon doped silicon containing films Haripin Chandra, Xinjian Lei, Anupama Mallikarjunan 2021-10-19
11126497 Method of equalizing bit error rates of memory device Eun Chu Oh, Young Sik Kim, Yong Jun Lee, Jeong Ho Lee 2021-09-21
11114160 Memory device for compensating for current of off cells and operating method thereof Venkataramana Gangasani, Tae Hui Na, Jun Ho SHIN 2021-09-07
11104990 Methods for depositing a conformal metal or metalloid silicon nitride film and resultant films Xinjian Lei, Jianheng Li 2021-08-31
11081337 Formulation for deposition of silicon doped hafnium oxide as ferroelectric materials Xinjian Lei, Matthew R. MacDonald, Se Won Lee 2021-08-03
11035039 Compositions and methods for depositing silicon nitride films Xinjian Lei, Manchao Xiao 2021-06-15
11017853 Cross point resistive memory device with compensation for leakage current in read operation Jong Ryul Kim 2021-05-25
10985010 Methods for making silicon and nitrogen containing films Haripin Chandra, Xinjian Lei 2021-04-20
10867672 Resistive memory device and programming method of the same Yong-Sung Cho, Seung-You Baek, Jong-Min Baek, Bong-Kil Jung 2020-12-15
10825517 Memory device for compensating for current of off cells and operating method thereof Venkataramana Gangasani, Tae Hui Na, Jun Ho SHIN 2020-11-03
10763103 Boron-containing compounds, compositions, and methods for the deposition of a boron containing films Xinjian Lei 2020-09-01
10745808 Methods for depositing Group 13 metal or metalloid nitride films Xinjian Lei, Sergei Vladimirovich Ivanov 2020-08-18
10556166 Automatic batting training apparatus 2020-02-11
10490289 Voltage generator for a nonvolatile memory device, and a method of operating the voltage generator Gyo-Soo Choo, Ji Hyun Park, Chi-Weon Yoon 2019-11-26
10316407 Compositions and methods using same for deposition of silicon-containing films Xinjian Lei, Matthew R. MacDonald, Manchao Xiao 2019-06-11
10290540 Disubstituted alkyne dicobalt hexacarbonyl compounds, method of making and method of use thereof Alan Charles Cooper, Sergei Vladimirovich Ivanov 2019-05-14
10245489 Automatic batting tee apparatus 2019-04-02