Issued Patents All Time
Showing 76–92 of 92 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7256432 | Field-effect transistor | Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Masaaki Kuzuhara | 2007-08-14 |
| 7071526 | Semiconductor device having Schottky junction electrode | Yuji Ando, Yasuhiro Okamoto, Kensuke Kasahara, Tatsuo Nakayama, Masaaki Kuzuhara | 2006-07-04 |
| 6765241 | Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances | Yasuo Ohno, Nobuyuki Hayama, Kensuke Kasahara, Tatsuo Nakayama, Yuji Takahashi +3 more | 2004-07-20 |
| 6552373 | Hetero-junction field effect transistor having an intermediate layer | Yuji Ando, Naotaka Iwata, Koji Matsunaga, Masaaki Kuzuhara, Kensuke Kasahara +5 more | 2003-04-22 |
| 6534790 | Compound semiconductor field effect transistor | Takehiko Kato, Kazuki Ota, Naotaka Iwata, Masaaki Kuzuhara | 2003-03-18 |
| 6492669 | Semiconductor device with schottky electrode having high schottky barrier | Tatsuo Nakayama, Yuji Ando, Kazuaki Kunihiro, Yuji Takahashi, Kensuke Kasahara +4 more | 2002-12-10 |
| 6465814 | Semiconductor device | Kensuke Kasahara, Yasuo Ohno, Masaaki Kuzuhara, Yuji Ando, Tatsuo Nakayama +4 more | 2002-10-15 |
| 6440822 | Method of manufacturing semiconductor device with sidewall metal layers | Nobuyuki Hayama, Masaaki Kuzuhara, Kouji Matsunaga, Tatsuo Nakayama, Yuji Takahashi +4 more | 2002-08-27 |
| 6441391 | Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate | Yasuo Ohno, Nobuyuki Hayama, Kensuke Kasahara, Tatsuo Nakayama, Yuji Takahashi +3 more | 2002-08-27 |
| 6235626 | Method of forming a gate electrode using an insulating film with an opening pattern | Yoichi Makino | 2001-05-22 |
| 6223246 | Computer system having an interrupt handler | — | 2001-04-24 |
| 5801405 | Field effect transistor | Tatsuo Nakayama | 1998-09-01 |
| 5635735 | Field effect transistor with an improved Schottky gate structure | Kazuhiko Onda | 1997-06-03 |
| 5608239 | Field effect transistor | Tatsuo Nakayama | 1997-03-04 |
| 5536358 | Method of estimating etching damage | Kazuaki Ashizuka | 1996-07-16 |
| 5364499 | Dry etching process for gallium arsenide excellent in selectivity with respect to aluminum gallium arsenide | — | 1994-11-15 |
| 4942438 | Compound semiconductor field-effect transistor | — | 1990-07-17 |