HM

Hironobu Miyamoto

RE Renesas Electronics: 47 patents #15 of 4,529Top 1%
NE Nec: 32 patents #217 of 14,502Top 2%
KT Kabushiki Kaisha Toshiba: 11 patents #2,779 of 21,451Top 15%
Kioxia: 1 patents #1,054 of 1,813Top 60%
Toshiba Memory: 1 patents #1,210 of 1,971Top 65%
Overall (All Time): #17,169 of 4,157,543Top 1%
92
Patents All Time

Issued Patents All Time

Showing 51–75 of 92 patents

Patent #TitleCo-InventorsDate
8674409 Heterojunction field effect transistor, method for producing heterojunction field effect transistor, and electronic device Takashi Inoue, Kazuki Ota, Tatsuo Nakayama, Yasuhiro Okamoto, Yuji Ando 2014-03-18
8674407 Semiconductor device using a group III nitride-based semiconductor Yuji Ando, Yasuhiro Okamoto, Kazuki Ota, Takashi Inoue, Tatsuo Nakayama 2014-03-18
8671257 Memory system having multiple channels and method of generating read commands for compaction in memory system Yoko Masuo, Wataru Okamoto 2014-03-11
8659055 Semiconductor device, field-effect transistor, and electronic device Yasuhiro Okamoto, Kazuki Ota, Takashi Inoue, Tatsuo Nakayama, Yuji Ando 2014-02-25
8618578 Field effect transistor Kazuki Ota, Yasuhiro Okamoto 2013-12-31
8583859 Storage controller for wear-leveling and compaction and method of controlling thereof Yoko Masuo, Wataru Okamoto 2013-11-12
8552471 Semiconductor apparatus having reverse blocking characteristics and method of manufacturing the same Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Kazuki Ota, Takashi Inoue +1 more 2013-10-08
8525229 Semiconductor device Yasuhiro Okamoto, Yuji Ando, Takashi Inoue, Tatsuo Nakayama 2013-09-03
8476756 Semiconductor device and heat sink with 3-dimensional thermal conductivity Naotaka Kuroda, Akio Wakejima, Masahiro Tanomura 2013-07-02
8466495 Field effect transistor with reduced gate leakage current Yuji Ando, Tatsuo Nakayama, Yasuhiro Okamoto, Takashi Inoue, Yasuhiro Murase +3 more 2013-06-18
8426895 Semiconductor device and manufacturing method of the same Yasuhiro Okamoto, Kazuki Ota, Takashi Inoue, Tatsuo Nakayama, Yuji Ando 2013-04-23
8395237 Group nitride bipolar transistor Yuji Ando, Tatsuo Nakayama, Yasuhiro Okamoto, Takashi Inoue, Kazuki Ota 2013-03-12
8370587 Memory system storing updated status information and updated address translation information and managing method therefor 2013-02-05
8344422 Semiconductor device Yuji Ando, Yasuhiro Okamoto, Kazuki Ota, Takashi Inoue, Tatsuo Nakayama 2013-01-01
8225058 Memory system managing a size of logs Hajime Yamazaki, Shinji Yonezawa 2012-07-17
8198652 Field effect transistor with reduced gate leakage current Yuji Ando, Tatsuo Nakayama, Yasuhiro Okamoto, Takashi Inoue, Yasuhiro Murase +3 more 2012-06-12
8063484 Semiconductor device and heat sink with 3-dimensional thermal conductivity Naotaka Kuroda, Akio Wakejima, Masahiro Tanomura 2011-11-22
7985984 III-nitride semiconductor field effect transistor Tatsuo Nakayama, Yuji Ando, Yasuhiro Okamoto, Takashi Inoue 2011-07-26
7973335 Field-effect transistor having group III nitride electrode structure Yasuhiro Okamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue, Masaaki Kuzuhara 2011-07-05
7863648 Field effect transistor Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Takashi Inoue, Kazuki Ota +6 more 2011-01-04
7859014 Semiconductor device Tatsuo Nakayama, Yuji Ando, Masaaki Kuzuhara, Yasuhiro Okamoto, Takashi Inoue +1 more 2010-12-28
7800131 Field effect transistor Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Takashi Inoue, Kazuki Ota +6 more 2010-09-21
7615868 Electrode, method for producing same and semiconductor device using same Tatsuo Nakayama, Yuji Ando, Takashi Inoue, Yasuhiro Okamoto, Masaaki Kuzuhara 2009-11-10
7459788 Ohmic electrode structure of nitride semiconductor device Tatsuo Nakayama, Yuji Ando, Masaaki Kuzuhara, Yasuhiro Okamoto, Takashi Inoue +1 more 2008-12-02
7323783 Electrode, method for producing same and semiconductor device using same Tatsuo Nakayama, Yuji Ando, Takashi Inoue, Yasuhiro Okamoto, Masaaki Kuzuhara 2008-01-29