Issued Patents All Time
Showing 1–25 of 25 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 8653561 | III-nitride semiconductor electronic device, and method of fabricating III-nitride semiconductor electronic device | Shin Hashimoto, Katsushi Akita, Yoshiyuki Yamamoto, Norimasa Yafune | 2014-02-18 |
| 7973335 | Field-effect transistor having group III nitride electrode structure | Yasuhiro Okamoto, Hironobu Miyamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue | 2011-07-05 |
| 7859014 | Semiconductor device | Tatsuo Nakayama, Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Takashi Inoue +1 more | 2010-12-28 |
| 7615868 | Electrode, method for producing same and semiconductor device using same | Tatsuo Nakayama, Hironobu Miyamoto, Yuji Ando, Takashi Inoue, Yasuhiro Okamoto | 2009-11-10 |
| 7459788 | Ohmic electrode structure of nitride semiconductor device | Tatsuo Nakayama, Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, Takashi Inoue +1 more | 2008-12-02 |
| 7323783 | Electrode, method for producing same and semiconductor device using same | Tatsuo Nakayama, Hironobu Miyamoto, Yuji Ando, Takashi Inoue, Yasuhiro Okamoto | 2008-01-29 |
| 7256432 | Field-effect transistor | Yasuhiro Okamoto, Hironobu Miyamoto, Yuji Ando, Tatsuo Nakayama, Takashi Inoue | 2007-08-14 |
| 7071526 | Semiconductor device having Schottky junction electrode | Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, Kensuke Kasahara, Tatsuo Nakayama | 2006-07-04 |
| 6765241 | Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances | Yasuo Ohno, Nobuyuki Hayama, Kensuke Kasahara, Tatsuo Nakayama, Hironobu Miyamoto +3 more | 2004-07-20 |
| 6552373 | Hetero-junction field effect transistor having an intermediate layer | Yuji Ando, Hironobu Miyamoto, Naotaka Iwata, Koji Matsunaga, Kensuke Kasahara +5 more | 2003-04-22 |
| 6534790 | Compound semiconductor field effect transistor | Takehiko Kato, Kazuki Ota, Hironobu Miyamoto, Naotaka Iwata | 2003-03-18 |
| 6492669 | Semiconductor device with schottky electrode having high schottky barrier | Tatsuo Nakayama, Yuji Ando, Hironobu Miyamoto, Kazuaki Kunihiro, Yuji Takahashi +4 more | 2002-12-10 |
| 6483135 | Field effect transistor | Masashi Mizuta, Yasunobu Nashimoto, Kazunori Asano, Yosuke Miyoshi, Yasunori Mochizuki | 2002-11-19 |
| 6465814 | Semiconductor device | Kensuke Kasahara, Yasuo Ohno, Hironobu Miyamoto, Yuji Ando, Tatsuo Nakayama +4 more | 2002-10-15 |
| 6440822 | Method of manufacturing semiconductor device with sidewall metal layers | Nobuyuki Hayama, Kouji Matsunaga, Tatsuo Nakayama, Yuji Takahashi, Yasuo Ohno +4 more | 2002-08-27 |
| 6441391 | Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate | Yasuo Ohno, Nobuyuki Hayama, Kensuke Kasahara, Tatsuo Nakayama, Hironobu Miyamoto +3 more | 2002-08-27 |
| 6255673 | Hetero-junction field effect transistor | — | 2001-07-03 |
| 6100571 | Fet having non-overlapping field control electrode between gate and drain | Masashi Mizuta, Yasunobu Nashimoto, Kazunori Asano, Yosuke Miyoshi, Yasunori Mochizuki | 2000-08-08 |
| 5596211 | Field effect transistor having a graded bandgap InGaAsP channel formed of a two-dimensional electron gas | Kazuhiko Onda | 1997-01-21 |
| 5504353 | Field effect transistor | — | 1996-04-02 |
| 5466955 | Field effect transistor having an improved transistor characteristic | Kenichi Maruhashi, Kazuhiko Onda | 1995-11-14 |
| 5453631 | Field effect transistor having a multi-layer channel | Kazuhiko Onda, Kenichi Maruhashi | 1995-09-26 |
| 5373168 | Two-dimensional electron gas field effect transistor including an improved InGaAs channel layer | Yuji Ando, Kazuhiko Onda | 1994-12-13 |
| 5272372 | High speed non-volatile programmable read only memory device fabricated by using selective doping technology | Yasuko Hori | 1993-12-21 |
| 5138405 | Quasi one-dimensional electron gas field effect transistor | — | 1992-08-11 |