YO

Yasuo Ohno

NE Nec: 17 patents #644 of 14,502Top 5%
MC Minebea Co.: 15 patents #33 of 736Top 5%
LS Laser Systems: 4 patents #1 of 14Top 8%
TI Takeda Chemical Industries: 2 patents #497 of 1,420Top 35%
NP Nippon Telegraph And Telephone Public: 1 patents #297 of 842Top 40%
OC Oki Electric Industry Co.: 1 patents #1,459 of 2,807Top 55%
Overall (All Time): #79,349 of 4,157,543Top 2%
40
Patents All Time

Issued Patents All Time

Showing 25 most recent of 40 patents

Patent #TitleCo-InventorsDate
11469682 Semiconductor device Hiroko ITOH 2022-10-11
11196302 Resonance apparatus, power transmission apparatus, and power transmission method 2021-12-07
11171572 Microwave-rectifying circuit Hiroko ITOH 2021-11-09
11095339 Resonance apparatus, power transmission apparatus, and power transmission method to improve noncontact power transmission 2021-08-17
9739447 Lighting apparatus Rumiko Tanaka 2017-08-22
9551478 Lighting device Masahisa Nishio 2017-01-24
9453621 Illumination apparatus having interconnectable light emitting parts 2016-09-27
8894235 Illumination device Shun KATO 2014-11-25
8783934 Spread illuminating apparatus Masahisa Nishio 2014-07-22
8534895 Light emitting device with a point-like light source Takuro Sakai 2013-09-17
8454220 Illuminator with light source units radially arranged at a reference point of a base frame Kaori Fujii, Masahisa Nishio 2013-06-04
8061885 Planar illumination device 2011-11-22
7866873 Planar illumination device 2011-01-11
7810978 Spread illuminating apparatus 2010-10-12
7600909 Spread illuminating apparatus 2009-10-13
7575360 Spread illuminating apparatus Katsumi Nagata, Masahisa Nishio 2009-08-18
7532479 Spread illuminating apparatus Chiharu Ota 2009-05-12
7530723 Spread illuminating apparatus 2009-05-12
7420158 Spread illuminating apparatus including a housing frame with an outer frame member and an inner frame member jointed to a light conductor plate Katsumi Nagata, Masahisa Nishio, Chiharu Ota 2008-09-02
6765241 Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances Nobuyuki Hayama, Kensuke Kasahara, Tatsuo Nakayama, Hironobu Miyamoto, Yuji Takahashi +3 more 2004-07-20
6552373 Hetero-junction field effect transistor having an intermediate layer Yuji Ando, Hironobu Miyamoto, Naotaka Iwata, Koji Matsunaga, Masaaki Kuzuhara +5 more 2003-04-22
6492669 Semiconductor device with schottky electrode having high schottky barrier Tatsuo Nakayama, Yuji Ando, Hironobu Miyamoto, Kazuaki Kunihiro, Yuji Takahashi +4 more 2002-12-10
6476431 Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same Kensuke Kasahara, Kazuaki Kunihiro, Yuji Takahashi 2002-11-05
6465814 Semiconductor device Kensuke Kasahara, Masaaki Kuzuhara, Hironobu Miyamoto, Yuji Ando, Tatsuo Nakayama +4 more 2002-10-15
6440822 Method of manufacturing semiconductor device with sidewall metal layers Nobuyuki Hayama, Masaaki Kuzuhara, Kouji Matsunaga, Tatsuo Nakayama, Yuji Takahashi +4 more 2002-08-27