| 7863648 |
Field effect transistor |
Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Takashi Inoue +6 more |
2011-01-04 |
| 7800131 |
Field effect transistor |
Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Takashi Inoue +6 more |
2010-09-21 |
| 7071526 |
Semiconductor device having Schottky junction electrode |
Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, Tatsuo Nakayama, Masaaki Kuzuhara |
2006-07-04 |
| 6765241 |
Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances |
Yasuo Ohno, Nobuyuki Hayama, Tatsuo Nakayama, Hironobu Miyamoto, Yuji Takahashi +3 more |
2004-07-20 |
| 6552373 |
Hetero-junction field effect transistor having an intermediate layer |
Yuji Ando, Hironobu Miyamoto, Naotaka Iwata, Koji Matsunaga, Masaaki Kuzuhara +5 more |
2003-04-22 |
| 6492669 |
Semiconductor device with schottky electrode having high schottky barrier |
Tatsuo Nakayama, Yuji Ando, Hironobu Miyamoto, Kazuaki Kunihiro, Yuji Takahashi +4 more |
2002-12-10 |
| 6476431 |
Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same |
Yasuo Ohno, Kazuaki Kunihiro, Yuji Takahashi |
2002-11-05 |
| 6465814 |
Semiconductor device |
Yasuo Ohno, Masaaki Kuzuhara, Hironobu Miyamoto, Yuji Ando, Tatsuo Nakayama +4 more |
2002-10-15 |
| 6441391 |
Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate |
Yasuo Ohno, Nobuyuki Hayama, Tatsuo Nakayama, Hironobu Miyamoto, Yuji Takahashi +3 more |
2002-08-27 |
| 6440822 |
Method of manufacturing semiconductor device with sidewall metal layers |
Nobuyuki Hayama, Masaaki Kuzuhara, Kouji Matsunaga, Tatsuo Nakayama, Yuji Takahashi +4 more |
2002-08-27 |
| 6180968 |
Compound semiconductor device and method of manufacturing the same |
Yasuo Ohno, Satoru Ohkubo |
2001-01-30 |
| 6093657 |
Fabrication process of semiconductor device |
Satoru Ohkubo |
2000-07-25 |
| 5869856 |
Field effect transistor |
— |
1999-02-09 |
| 4837605 |
Indium-phosphide hetero-MIS-gate field effect transistor |
Tomohiro Itoh, Keiichi Ohata |
1989-06-06 |
| 4829346 |
Field-effect transistor and the same associated with an optical semiconductor device |
Tomoji Terakado, Yasumasa Inomoto, Akira Suzuki, Tomohiro Itoh |
1989-05-09 |