Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 7863648 | Field effect transistor | Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Takashi Inoue +6 more | 2011-01-04 |
| 7800131 | Field effect transistor | Hironobu Miyamoto, Yuji Ando, Yasuhiro Okamoto, Tatsuo Nakayama, Takashi Inoue +6 more | 2010-09-21 |
| 7071526 | Semiconductor device having Schottky junction electrode | Yuji Ando, Hironobu Miyamoto, Yasuhiro Okamoto, Tatsuo Nakayama, Masaaki Kuzuhara | 2006-07-04 |
| 6765241 | Group III nitride semiconductor device of field effect transistor type having reduced parasitic capacitances | Yasuo Ohno, Nobuyuki Hayama, Tatsuo Nakayama, Hironobu Miyamoto, Yuji Takahashi +3 more | 2004-07-20 |
| 6552373 | Hetero-junction field effect transistor having an intermediate layer | Yuji Ando, Hironobu Miyamoto, Naotaka Iwata, Koji Matsunaga, Masaaki Kuzuhara +5 more | 2003-04-22 |
| 6492669 | Semiconductor device with schottky electrode having high schottky barrier | Tatsuo Nakayama, Yuji Ando, Hironobu Miyamoto, Kazuaki Kunihiro, Yuji Takahashi +4 more | 2002-12-10 |
| 6476431 | Field effect transistor with barrier layer to prevent avalanche breakdown current from reaching gate and method for manufacturing the same | Yasuo Ohno, Kazuaki Kunihiro, Yuji Takahashi | 2002-11-05 |
| 6465814 | Semiconductor device | Yasuo Ohno, Masaaki Kuzuhara, Hironobu Miyamoto, Yuji Ando, Tatsuo Nakayama +4 more | 2002-10-15 |
| 6441391 | Semiconductor device having drain and gate electrodes formed to lie along few degrees of direction in relation to the substrate | Yasuo Ohno, Nobuyuki Hayama, Tatsuo Nakayama, Hironobu Miyamoto, Yuji Takahashi +3 more | 2002-08-27 |
| 6440822 | Method of manufacturing semiconductor device with sidewall metal layers | Nobuyuki Hayama, Masaaki Kuzuhara, Kouji Matsunaga, Tatsuo Nakayama, Yuji Takahashi +4 more | 2002-08-27 |
| 6180968 | Compound semiconductor device and method of manufacturing the same | Yasuo Ohno, Satoru Ohkubo | 2001-01-30 |
| 6093657 | Fabrication process of semiconductor device | Satoru Ohkubo | 2000-07-25 |
| 5869856 | Field effect transistor | — | 1999-02-09 |
| 4837605 | Indium-phosphide hetero-MIS-gate field effect transistor | Tomohiro Itoh, Keiichi Ohata | 1989-06-06 |
| 4829346 | Field-effect transistor and the same associated with an optical semiconductor device | Tomoji Terakado, Yasumasa Inomoto, Akira Suzuki, Tomohiro Itoh | 1989-05-09 |