| 6924201 |
Heterojunction bipolar transistor and method of producing the same |
Masahiro Tanomura, Hidenori Shimawaki, Fumio Harima |
2005-08-02 |
| 6723664 |
Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction |
Hideki Matsumura, Akira Izumi, Atsushi Masuda, Yasunobu Nashimoto, Shuji Nomura +2 more |
2004-04-20 |
| 6717192 |
Schottky gate field effect transistor |
— |
2004-04-06 |
| 6483135 |
Field effect transistor |
Masashi Mizuta, Masaaki Kuzuhara, Yasunobu Nashimoto, Kazunori Asano, Yasunori Mochizuki |
2002-11-19 |
| 6462362 |
Heterojunction bipolar transistor having prevention layer between base and emitter |
— |
2002-10-08 |
| 6349669 |
Method and apparatus for depositing a thin film, and semiconductor device having a semiconductor-insulator junction |
Hideki Matsumura, Akira Izumi, Atsushi Masuda, Yasunobu Nashimoto, Shuji Nomura +2 more |
2002-02-26 |
| 6325857 |
CVD apparatus |
— |
2001-12-04 |
| 6225241 |
Catalytic deposition method for a semiconductor surface passivation film |
— |
2001-05-01 |
| 6100571 |
Fet having non-overlapping field control electrode between gate and drain |
Masashi Mizuta, Masaaki Kuzuhara, Yasunobu Nashimoto, Kazunori Asano, Yasunori Mochizuki |
2000-08-08 |
| 6069094 |
Method for depositing a thin film |
Hideki Matsumura, Akira Izumi, Atsushi Masuda, Yasunobu Nashimoto, Shuji Nomura +2 more |
2000-05-30 |
| 5942792 |
Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface |
— |
1999-08-24 |