Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface

Compound semiconductor device having a multilayer silicon structure between an active region and insulator layer for reducing surface state density at interface

US Patent 5942792 · Granted Aug 24, 1999

Estimated economic value: $23,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Heterojunction bipolar transistor and method of producing the same2005
Method and apparatus for depositing a thin film, and semiconductor device having2004
Schottky gate field effect transistor2004
Field effect transistor2002
Heterojunction bipolar transistor having prevention layer between base and emitt2002
Method and apparatus for depositing a thin film, and semiconductor device having2002
CVD apparatus2001
Catalytic deposition method for a semiconductor surface passivation film2001
Fet having non-overlapping field control electrode between gate and drain2000
Method for depositing a thin film2000