Issued Patents All Time
Showing 1–23 of 23 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12243936 | AIN channel heterostructure field effect transistor | — | 2025-03-04 |
| 11942919 | Strain compensated rare earth group III-nitride heterostructures | John Logan, Jason C. Soric, Adam E. Peczalski, Brian D. Schultz | 2024-03-26 |
| 11862691 | Field effect transistor having field plate | Michael S. Davis, Brian Thomas Appleton, Jr. | 2024-01-02 |
| 11848662 | Tunable monolithic group III-nitride filter banks | Jason C. Soric, Jeffrey R. LaRoche, Adam E. Peczalski | 2023-12-19 |
| 11784248 | Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures | Jeffrey R. LaRoche, Kelly P. Ip, Thomas E. Kazior | 2023-10-10 |
| 11726258 | Photonic devices | Mohammad Soltani | 2023-08-15 |
| 11709314 | Photonic devices | Mohammad Soltani | 2023-07-25 |
| 11703637 | Photonic devices | Mohammad Soltani | 2023-07-18 |
| 11515410 | Group III-V semiconductor structures having crystalline regrowth layers and methods for forming such structures | Jeffrey R. LaRoche, Kelly P. Ip, Thomas E. Kazior | 2022-11-29 |
| 11262604 | Photonic devices | Mohammad Soltani | 2022-03-01 |
| 11177216 | Nitride structures having low capacitance gate contacts integrated with copper damascene structures | Jeffrey R. LaRoche, Kelly P. Ip, Thomas E. Kazior | 2021-11-16 |
| 11054673 | Photonic devices | Mohammad Soltani | 2021-07-06 |
| 10890712 | Photonic and electric devices on a common layer | Mohammad Soitani | 2021-01-12 |
| 10276705 | Group III—nitride double-heterojunction field effect transistor | Brian D. Schultz | 2019-04-30 |
| 10224285 | Nitride structure having gold-free contact and methods for forming such structures | Jeffrey R. LaRoche, Kelly P. Ip, Thomas E. Kazior | 2019-03-05 |
| 10096550 | Nitride structure having gold-free contact and methods for forming such structures | Jeffrey R. LaRoche, Kelly P. Ip, Thomas E. Kazior | 2018-10-09 |
| 9960262 | Group III—nitride double-heterojunction field effect transistor | Brian D. Schultz | 2018-05-01 |
| 9419083 | Semiconductor structures having a gate field plate and methods for forming such structure | John P. Bettencourt | 2016-08-16 |
| 9419125 | Doped barrier layers in epitaxial group III nitrides | Brian D. Schultz, Abbas Torabi, Shahed Reza, William E. Hoke | 2016-08-16 |
| 9379228 | Heterojunction field effect transistor (HFET) variable gain amplifier having variable transconductance | Jeffrey H. Saunders, Shahed Reza | 2016-06-28 |
| 9293379 | Semiconductor structure with layers having different hydrogen contents | William E. Hoke, Kelly P. Ip, Dale M. Shaw, Steven K. Brierley | 2016-03-22 |
| 9231064 | Double heterojunction group III-nitride structures | Shahed Reza, Thomas E. Kazior, Gerhard Sollner | 2016-01-05 |
| 8772786 | Gallium nitride devices having low ohmic contact resistance | Kamal Tabatabaie, William E. Hoke, Kevin Robert McCarthy | 2014-07-08 |