Issued Patents All Time
Showing 1–15 of 15 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12301195 | Epitaxial growth of aluminum on aluminum-nitride compounds | John Logan, Theodore D. Kennedy | 2025-05-13 |
| 11942919 | Strain compensated rare earth group III-nitride heterostructures | John Logan, Jason C. Soric, Adam E. Peczalski, Eduardo M. Chumbes | 2024-03-26 |
| 11594627 | Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors | Kiuchul Hwang, John Logan, Christos Thomidis | 2023-02-28 |
| 11545566 | Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement | Abbas Torabi, John Logan | 2023-01-03 |
| 11362190 | Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers | Kiuchul Hwang, John Logan, Robert E. Leoni, Nicholas J. Kolias | 2022-06-14 |
| 11127596 | Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation | Kiuchul Hwang, Amanda Kerr | 2021-09-21 |
| 11101378 | Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors | Kiuchul Hwang, John Logan, Christos Thomidis | 2021-08-24 |
| 10622447 | Group III-nitride structure having successively reduced crystallographic dislocation density regions | Theodore D. Kennedy, Amanda Kerr, William E. Hoke | 2020-04-14 |
| 10276705 | Group III—nitride double-heterojunction field effect transistor | Eduardo M. Chumbes | 2019-04-30 |
| 9960262 | Group III—nitride double-heterojunction field effect transistor | Eduardo M. Chumbes | 2018-05-01 |
| 9419125 | Doped barrier layers in epitaxial group III nitrides | Abbas Torabi, Eduardo M. Chumbes, Shahed Reza, William E. Hoke | 2016-08-16 |
| 9414478 | Self-tuned dielectric barrier discharge | William M. Hooke, Michael J. Kelly | 2016-08-09 |
| 8263976 | Semiconductor structure with coincident lattice interlayer | Gary Elder McGuire | 2012-09-11 |
| 8084947 | Pulsed dielectric barrier discharge | William M. Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire | 2011-12-27 |
| 7960259 | Semiconductor structure with coincident lattice interlayer | Gary Elder McGuire | 2011-06-14 |