Brian D. Schultz — 15 Patents at RTX (Raytheon)

Brian D. Schultz has been granted 15 US patents while listed as an inventor at RTX (Raytheon). The first was granted in 2011 and the most recent in May 2025. Brian D. Schultz ranks #307,048 of 4,157,543 US inventors in our database (top 7.4%). Patent records list Brian D. Schultz in Lexington, MA, US.

Patents per Year

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Showing 1–15 of 15 patents

Patent #	Title	Co-Inventors	Date	Approx Value ⓘ
12301195	Epitaxial growth of aluminum on aluminum-nitride compounds	John Logan, Theodore D. Kennedy	2025-05-13
11942919	Strain compensated rare earth group III-nitride heterostructures	John Logan, Jason C. Soric, Adam E. Peczalski, Eduardo M. Chumbes	2024-03-26
11594627	Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors	Kiuchul Hwang, John Logan, Christos Thomidis	2023-02-28
11545566	Gallium nitride high electron mobility transistors (HEMTs) having reduced current collapse and power added efficiency enhancement	Abbas Torabi, John Logan	2023-01-03
11362190	Depletion mode high electron mobility field effect transistor (HEMT) semiconductor device having beryllium doped Schottky contact layers	Kiuchul Hwang, John Logan, Robert E. Leoni, Nicholas J. Kolias	2022-06-14
11127596	Semiconductor material growth of a high resistivity nitride buffer layer using ion implantation	Kiuchul Hwang, Amanda Kerr	2021-09-21
11101378	Semiconductor structure having both enhancement mode group III-N high electron mobility transistors and depletion mode group III-N high electron mobility transistors	Kiuchul Hwang, John Logan, Christos Thomidis	2021-08-24
10622447	Group III-nitride structure having successively reduced crystallographic dislocation density regions	Theodore D. Kennedy, Amanda Kerr, William E. Hoke	2020-04-14
10276705	Group III—nitride double-heterojunction field effect transistor	Eduardo M. Chumbes	2019-04-30	$30,406,000
9960262	Group III—nitride double-heterojunction field effect transistor	Eduardo M. Chumbes	2018-05-01	$39,947,000
9419125	Doped barrier layers in epitaxial group III nitrides	Abbas Torabi, Eduardo M. Chumbes, Shahed Reza, William E. Hoke	2016-08-16	$25,108,000
9414478	Self-tuned dielectric barrier discharge	William M. Hooke, Michael J. Kelly	2016-08-09
8263976	Semiconductor structure with coincident lattice interlayer	Gary Elder McGuire	2012-09-11
8084947	Pulsed dielectric barrier discharge	William M. Hooke, Allen Richard Martin, Mark Alan Ray, Gary Elder McGuire	2011-12-27
7960259	Semiconductor structure with coincident lattice interlayer	Gary Elder McGuire	2011-06-14

Brian D. Schultz — 15 Patents

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