Issued Patents All Time
Showing 25 most recent of 28 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 10622447 | Group III-nitride structure having successively reduced crystallographic dislocation density regions | Brian D. Schultz, Theodore D. Kennedy, Amanda Kerr | 2020-04-14 |
| 9419125 | Doped barrier layers in epitaxial group III nitrides | Brian D. Schultz, Abbas Torabi, Eduardo M. Chumbes, Shahed Reza | 2016-08-16 |
| 9293379 | Semiconductor structure with layers having different hydrogen contents | Eduardo M. Chumbes, Kelly P. Ip, Dale M. Shaw, Steven K. Brierley | 2016-03-22 |
| 8823146 | Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices | — | 2014-09-02 |
| 8772786 | Gallium nitride devices having low ohmic contact resistance | Kamal Tabatabaie, Eduardo M. Chumbes, Kevin Robert McCarthy | 2014-07-08 |
| 8698200 | Gallium nitride for liquid crystal electrodes | Daniel P. Resler | 2014-04-15 |
| 8575666 | Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor | Jeffrey R. LaRoche, Thomas E. Kazior | 2013-11-05 |
| 8268707 | Gallium nitride for liquid crystal electrodes | Daniel P. Resler | 2012-09-18 |
| 8212294 | Structure having silicon CMOS transistors with column III-V transistors on a common substrate | Jeffrey R. LaRoche | 2012-07-03 |
| 7968865 | Boron aluminum nitride diamond heterostructure | Jeffrey R. LaRoche, Steven D. Bernstein, Ralph Korenstein | 2011-06-28 |
| 7776152 | Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth | Theodore D. Kennedy | 2010-08-17 |
| 7557378 | Boron aluminum nitride diamond heterostructure | Jeffrey R. LaRoche, Steven D. Bernstein, Ralph Korenstein | 2009-07-07 |
| 7226850 | Gallium nitride high electron mobility transistor structure | John J. Mosca | 2007-06-05 |
| 6835969 | Split-channel high electron mobility transistor (HEMT) device | Philbert Francis Marsh, Colin S. Whelan | 2004-12-28 |
| 6818928 | Quaternary-ternary semiconductor devices | Peter S. Lyman | 2004-11-16 |
| 6797994 | Double recessed transistor | Katerina Hur | 2004-09-28 |
| 6620662 | Double recessed transistor | Katerina Hur | 2003-09-16 |
| 6573129 | Gate electrode formation in double-recessed transistor by two-step etching | Katerina Hur, Rebecca McTaggart | 2003-06-03 |
| 6489639 | High electron mobility transistor | Peter J. Lemonias, Theodore D. Kennedy | 2002-12-03 |
| 6368983 | Multi-layer wafer fabrication | Peter S. Lyman, John J. Mosca | 2002-04-09 |
| 6271547 | Double recessed transistor with resistive layer | Katerina Hur, Rebecca McTaggart | 2001-08-07 |
| 5448084 | Field effect transistors on spinel substrates | H. Jerrold Van Hook | 1995-09-05 |
| 5077875 | Reactor vessel for the growth of heterojunction devices | Noren Pan, James Carter | 1992-01-07 |
| 5060030 | Pseudomorphic HEMT having strained compensation layer | — | 1991-10-22 |
| 4904337 | Photo-enhanced pyrolytic MOCVD growth of group II-VI materials | James M. Elliott, Vilnis G. Kreismanis | 1990-02-27 |