| 10622447 |
Group III-nitride structure having successively reduced crystallographic dislocation density regions |
Brian D. Schultz, Theodore D. Kennedy, Amanda Kerr |
2020-04-14 |
|
| 9419125 |
Doped barrier layers in epitaxial group III nitrides |
Brian D. Schultz, Abbas Torabi, Eduardo M. Chumbes, Shahed Reza |
2016-08-16 |
$25,108,000 |
| 9293379 |
Semiconductor structure with layers having different hydrogen contents |
Eduardo M. Chumbes, Kelly P. Ip, Dale M. Shaw, Steven K. Brierley |
2016-03-22 |
$12,225,000 |
| 8823146 |
Semiconductor structure having silicon devices, column III-nitride devices, and column III-non-nitride or column II-VI devices |
— |
2014-09-02 |
$19,222,000 |
| 8772786 |
Gallium nitride devices having low ohmic contact resistance |
Kamal Tabatabaie, Eduardo M. Chumbes, Kevin Robert McCarthy |
2014-07-08 |
$10,738,000 |
| 8698200 |
Gallium nitride for liquid crystal electrodes |
Daniel P. Resler |
2014-04-15 |
$18,375,000 |
| 8575666 |
Method and structure having monolithic heterogeneous integration of compound semiconductors with elemental semiconductor |
Jeffrey R. LaRoche, Thomas E. Kazior |
2013-11-05 |
$13,658,000 |
| 8268707 |
Gallium nitride for liquid crystal electrodes |
Daniel P. Resler |
2012-09-18 |
$21,669,000 |
| 8212294 |
Structure having silicon CMOS transistors with column III-V transistors on a common substrate |
Jeffrey R. LaRoche |
2012-07-03 |
$6,564,000 |
| 7968865 |
Boron aluminum nitride diamond heterostructure |
Jeffrey R. LaRoche, Steven D. Bernstein, Ralph Korenstein |
2011-06-28 |
$5,685,000 |
| 7776152 |
Method for continuous, in situ evaluation of entire wafers for macroscopic features during epitaxial growth |
Theodore D. Kennedy |
2010-08-17 |
$6,901,000 |
| 7557378 |
Boron aluminum nitride diamond heterostructure |
Jeffrey R. LaRoche, Steven D. Bernstein, Ralph Korenstein |
2009-07-07 |
$19,269,000 |
| 7226850 |
Gallium nitride high electron mobility transistor structure |
John J. Mosca |
2007-06-05 |
$29,822,000 |
| 6835969 |
Split-channel high electron mobility transistor (HEMT) device |
Philbert Francis Marsh, Colin S. Whelan |
2004-12-28 |
$21,322,000 |
| 6818928 |
Quaternary-ternary semiconductor devices |
Peter S. Lyman |
2004-11-16 |
$17,733,000 |
| 6797994 |
Double recessed transistor |
Katerina Hur |
2004-09-28 |
$17,392,000 |
| 6620662 |
Double recessed transistor |
Katerina Hur |
2003-09-16 |
$21,322,000 |
| 6573129 |
Gate electrode formation in double-recessed transistor by two-step etching |
Katerina Hur, Rebecca McTaggart |
2003-06-03 |
$17,799,000 |
| 6489639 |
High electron mobility transistor |
Peter J. Lemonias, Theodore D. Kennedy |
2002-12-03 |
$25,308,000 |
| 6368983 |
Multi-layer wafer fabrication |
Peter S. Lyman, John J. Mosca |
2002-04-09 |
$63,940,000 |
| 6271547 |
Double recessed transistor with resistive layer |
Katerina Hur, Rebecca McTaggart |
2001-08-07 |
$18,872,000 |
| 5448084 |
Field effect transistors on spinel substrates |
H. Jerrold Van Hook |
1995-09-05 |
$29,231,000 |
| 5077875 |
Reactor vessel for the growth of heterojunction devices |
Noren Pan, James Carter |
1992-01-07 |
$13,272,000 |
| 5060030 |
Pseudomorphic HEMT having strained compensation layer |
— |
1991-10-22 |
$12,638,000 |
| 4904337 |
Photo-enhanced pyrolytic MOCVD growth of group II-VI materials |
James M. Elliott, Vilnis G. Kreismanis |
1990-02-27 |
$5,062,000 |
