Issued Patents All Time
Showing 1–9 of 9 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 11081559 | Backside contact of a semiconductor device | Qingqing Liang, George Imthurn, Sinan Goktepeli | 2021-08-03 |
| 11081582 | High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology | Qingqing Liang, Ravi Pramod Kumar VEDULA, George Imthurn, Sinan Goktepeli | 2021-08-03 |
| 10903357 | Laterally diffused metal oxide semiconductor (LDMOS) transistor on a semiconductor on insulator (SOI) layer with a backside device | Sinan Goktepeli, George Imthurn | 2021-01-26 |
| 10840383 | Non-volatile memory (NVM) structure with front and back gates | Qingqing Liang, Peter Graeme CLARKE, George Imthurn, Sinan Goktepeli | 2020-11-17 |
| 10770480 | Systems, methods, and apparatus for enabling high voltage circuits | Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green | 2020-09-08 |
| 10600910 | High voltage (HV) metal oxide semiconductor field effect transistor (MOSFET) in semiconductor on insulator (SOI) technology | Qingqing Liang, Ravi Pramod Kumar VEDULA, George Imthurn, Sinan Goktepeli | 2020-03-24 |
| 10147740 | Methods and structures for reducing back gate effect in a semiconductor device | Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green | 2018-12-04 |
| 9847348 | Systems, methods and apparatus for enabling high voltage circuits | Buddhika Abesingha, Simon Edward Willard, Alain Duvallet, Merlin Green | 2017-12-19 |
| 8835298 | NiSi rework procedure to remove platinum residuals | Clemens Fitz, Markus Lenski, Jochen Willi. Poth, Kristin Schupke | 2014-09-16 |