Issued Patents All Time
Showing 1–21 of 21 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12166118 | High electron mobility transistors (HEMTS) including a yttrium (Y) and aluminum nitride (AIN) (YAIN) alloy layer | Edward A. Beam, III, Antonio Lucero | 2024-12-10 |
| 12074214 | High electron mobility transistor device having an aluminum-doped buffer layer | Jose Jimenez, Vipan Kumar | 2024-08-27 |
| 10749009 | Process of fabricating high efficiency, high linearity N-polar gallium-nitride (GaN) transistors | Xing Gu, Cathy Lee | 2020-08-18 |
| 10734512 | High electron mobility transistor (HEMT) device | Edward A. Beam, III | 2020-08-04 |
| 10636881 | High electron mobility transistor (HEMT) device | Edward A. Beam, III | 2020-04-28 |
| 10559665 | Field-effect transistor | Edward A. Beam, III | 2020-02-11 |
| 10446544 | Enhancement-mode/depletion-mode field-effect transistor GAN technology | Jose Jimenez | 2019-10-15 |
| 10290713 | Field-effect transistor | Edward A. Beam, III | 2019-05-14 |
| 10177247 | Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces | Xing Gu, Edward A. Beam, III | 2019-01-08 |
| 10090172 | Semiconductor device with high thermal conductivity substrate and process for making the same | Xing Gu, Edward A. Beam, III, Cathy Lee | 2018-10-02 |
| 10037899 | Semiconductor device with high thermal conductivity substrate and process for making the same | Xing Gu, Edward A. Beam, III, Cathy Lee | 2018-07-31 |
| 9972708 | Double heterojunction field effect transistor with polarization compensated layer | Edward A. Beam, III, Xing Gu | 2018-05-15 |
| 9865721 | High electron mobility transistor (HEMT) device and method of making the same | Edward A. Beam, III | 2018-01-09 |
| 9840790 | Highly transparent aluminum nitride single crystalline layers and devices made therefrom | Akinori Koukitu, Yoshinao Kumagai, Toru Nagashima, Toru Kinoshita, Yuki Kubota +4 more | 2017-12-12 |
| 9748409 | Power semiconductor devices incorporating single crystalline aluminum nitride substrate | Baxter Moody, Seiji Mita | 2017-08-29 |
| 9680062 | Optoelectronic devices incorporating single crystalline aluminum nitride substrate | Baxter Moody, Seiji Mita | 2017-06-13 |
| 9640650 | Doped gallium nitride high-electron mobility transistor | Edward A. Beam, III | 2017-05-02 |
| 9337278 | Gallium nitride on high thermal conductivity material device and method | Xing Gu, Edward A. Beam, III, Deep C. Dumka, Cathy Lee | 2016-05-10 |
| 9299883 | Optoelectronic devices incorporating single crystalline aluminum nitride substrate | Baxter Moody, Seiji Mita | 2016-03-29 |
| 9202905 | Digital alloy layer in a III-nitrade based heterojunction field effect transistor | Edward A. Beam, III, Ming-Yih Kao, Hua Q. Tserng, Paul Saunier | 2015-12-01 |
| 8008181 | Propagation of misfit dislocations from buffer/Si interface into Si | Zuzanna Liliental-Weber, Rogerio Luis Maltez, Hadis Morkoc | 2011-08-30 |