Issued Patents All Time
Showing 1–25 of 27 patents
| Patent # | Title | Co-Inventors | Date |
|---|---|---|---|
| 12166118 | High electron mobility transistors (HEMTS) including a yttrium (Y) and aluminum nitride (AIN) (YAIN) alloy layer | Jinqiao Xie, Antonio Lucero | 2024-12-10 |
| 10734512 | High electron mobility transistor (HEMT) device | Jinqiao Xie | 2020-08-04 |
| 10636881 | High electron mobility transistor (HEMT) device | Jinqiao Xie | 2020-04-28 |
| 10559665 | Field-effect transistor | Jinqiao Xie | 2020-02-11 |
| 10290713 | Field-effect transistor | Jinqiao Xie | 2019-05-14 |
| 10177247 | Continuous crystalline gallium nitride (GaN) PN structure with no internal regrowth interfaces | Jinqiao Xie, Xing Gu | 2019-01-08 |
| 10090172 | Semiconductor device with high thermal conductivity substrate and process for making the same | Xing Gu, Jinqiao Xie, Cathy Lee | 2018-10-02 |
| 10037899 | Semiconductor device with high thermal conductivity substrate and process for making the same | Xing Gu, Jinqiao Xie, Cathy Lee | 2018-07-31 |
| 9972708 | Double heterojunction field effect transistor with polarization compensated layer | Jinqiao Xie, Xing Gu | 2018-05-15 |
| 9865721 | High electron mobility transistor (HEMT) device and method of making the same | Jinqiao Xie | 2018-01-09 |
| 9640650 | Doped gallium nitride high-electron mobility transistor | Jinqiao Xie | 2017-05-02 |
| 9337278 | Gallium nitride on high thermal conductivity material device and method | Xing Gu, Jinqiao Xie, Deep C. Dumka, Cathy Lee | 2016-05-10 |
| 9202905 | Digital alloy layer in a III-nitrade based heterojunction field effect transistor | Jinqiao Xie, Ming-Yih Kao, Hua Q. Tserng, Paul Saunier | 2015-12-01 |
| 9029914 | Group III-nitride-based transistor with gate dielectric including a fluoride -or chloride- based compound | Paul Saunier | 2015-05-12 |
| 8975664 | Group III-nitride transistor using a regrown structure | Paul Saunier | 2015-03-10 |
| 8778747 | Regrown Schottky structures for GAN HEMT devices | — | 2014-07-15 |
| 8350295 | Device structure including high-thermal-conductivity substrate | Paul Saunier, Deep C. Dumka | 2013-01-08 |
| 7148463 | Increased responsivity photodetector | Aaditya Mahajan, Jose L. Jiminez, Andrew Arthur Ketterson | 2006-12-12 |
| 6787826 | Heterostructure field effect transistor | Hua Q. Tserng, Ming-Yih Kao | 2004-09-07 |
| 6697412 | Long wavelength laser diodes on metamorphic buffer modified gallium arsenide wafers | Gary A. Evans, Paul Saunier, Ming-Yih Kao, David Michael Fanning, William H. Davenport +2 more | 2004-02-24 |
| 5952059 | Forming a piezoelectric layer with improved texture | Andrew J. Purdes | 1999-09-14 |
| 5935641 | Method of forming a piezoelectric layer with improved texture | Andrew J. Purdes | 1999-08-10 |
| 5893390 | Flow controller | — | 1999-04-13 |
| 5534714 | Integrated field effect transistor and resonant tunneling diode | Alan C. Seabaugh | 1996-07-09 |
| 5416040 | Method of making an integrated field effect transistor and resonant tunneling diode | Alan C. Seabaugh | 1995-05-16 |