| 12295185 |
Epitaxial substrate having a 2D material interposer, method for manufacturing the epitaxial substrate, and device prepared from the epitaxial substrate |
Neng-Tai Shih, Kao-Mei Sung |
2025-05-06 |
| 10297446 |
Encapsulated substrate, manufacturing method, high band-gap device having encapsulated substrate |
Po-Yen Liu, Kao-Mei Sung |
2019-05-21 |
| 8012810 |
Low parasitic capacitance bit line process for stack DRAM |
Chih-Hung Liao |
2011-09-06 |
| 6703273 |
Aggressive capacitor array cell layout for narrow diameter DRAM trench capacitor structures via SOI technology |
Chao-Hsi Cheng, Hung-Kwei Liao |
2004-03-09 |
| 6680237 |
Method of manufacturing deep trench capacitor |
Shih-Lung Chen, Hwei-Lin Chuang, Yueh-Chuan Lee |
2004-01-20 |
| 6444524 |
Method for forming a trench capacitor |
Jesse Chung, Sheng Fen Chiu |
2002-09-03 |
| 6391706 |
Method for making deep trench capacitors for DRAMs with reduced faceting at the substrate edge and providing a more uniform pad Si3N4layer across the substrate |
Chao-Chueh Wu, Sheng Fen Chiu, Jesse Chung |
2002-05-21 |
