Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

On-pitch drain select level isolation structure for three-dimensional memory device and method of making the same

US Patent RE49165 · Granted Aug 9, 2022

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Three-dimensional memory device with laterally separated source select electrode2025
Select gate bias gradation structure in NAND memory2025
Three-dimensional memory device including laterally separated source lines and m2025
Sub-block separation in NAND memory through word line based selectors2025
Bonded assembly containing conductive via structures extending through word line2025
Three-dimensional memory device and method of making thereof using double pitch 2025
Channel pre-charge process in a memory device2025
Three-dimensional memory device containing plural metal oxide blocking dielectri2025
Three-dimensional nor array and method of making the same2025
Three-dimensional nor array and method of making the same2025
Three-dimensional memory device containing epitaxial pedestals and top source co2025
Three-dimensional memory device with finned support pillar structures and method2025