Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface

Physical vapor deposition method with a source of isotropic ion velocity distribution at the wafer surface

US Patent 9856558 · Granted Jan 2, 2018

Estimated economic value: $37,336,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Apparatus to produce a waveform2025
System, method, and apparatus for controlling ion energy distribution in plasma 2025
Apparatus to control a waveform2024
Systems and methods for monitoring faults, anomalies, and other characteristics 2024
Apparatus with switches to produce a waveform2024
Liquid electrolyte for lithium metal battery2024
Electrochemical cell design with lithium metal anode2023
System, method, and apparatus for controlling ion energy distribution in plasma 2023
Anode structure for a lithium metal battery2022
Systems and methods for monitoring faults, anomalies, and other characteristics 2021
Semiconductor nitridation passivation2021
Shutter disk for physical vapor deposition chamber2021