Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Process for forming silicon-filled openings with a reduced occurrence of voids

Process for forming silicon-filled openings with a reduced occurrence of voids

US Patent 9837271 · Granted Dec 5, 2017

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Apparatus and method to process wafers2025
Substrate processing apparatus, reactor mover for moving a reactor of the appara2025
Method and wafer processing furnace for forming an epitaxial stack of semiconduc2025
Apparatus for processing a plurality of substrates provided with an extractor ch2025
Method and wafer processing furnace for forming an epitaxial stack on a pluralit2025
Wafer processing apparatus with a rotatable table2025
Flange and apparatus for processing substrates2025
Cassette lid opening device2025
Apparatus and methods for performing an in-situ etch of reaction chambers with f2025
Substrate processing apparatus for processing substrates2024
Chemical vapor deposition furnace with a cleaning gas system to provide a cleani2024
Method for forming a structure with a hole2024