Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Strain engineering devices using partial depth films in through-substrate vias

Strain engineering devices using partial depth films in through-substrate vias

US Patent 9728506 · Granted Aug 8, 2017

Estimated economic value: $10,842,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Resist patterned redistribution wiring on copper polyimide via layer2025
Stacked semiconductor devices with topside and backside interconnect wiring2025
Dual redistribution layer structure2025
Dual-metal ultra thick metal (UTM) structure2025
TSV and backside power distribution structure2025
Infrared debond damage mitigation by copper fill pattern2025
Sintering a nanoparticle paste for semiconductor chip join2025
Smart trim die assembly2024
Substrate thinning for a backside power distribution network2024
Semiconductor device with early buried power rail (BPR) and backside power distr2024
High density interconnection and wiring layers, package structures, and integrat2024
Stacked FET integration with BSPDN2024