Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Stacked FET integration with BSPDN

Stacked FET integration with BSPDN

US Patent 11984401 · Granted May 14, 2024

Estimated economic value: $15,691,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Resist patterned redistribution wiring on copper polyimide via layer2025
Stacked semiconductor devices with topside and backside interconnect wiring2025
Dual redistribution layer structure2025
TSV and backside power distribution structure2025
TSV and backside power distribution structure2025
Wraparound contact with reduced distance to channel2025
Nanowire source/drain formation for nanosheet device2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Multi-VT solution for replacement metal gate bonded stacked FET2025
Local enlarged via-to-backside power rail2025
Skip-level TSV with hybrid dielectric scheme for backside power delivery2025
Dual structured buried rail2025