Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Measuring and controlling wafer potential in pulsed RF bias processing

Measuring and controlling wafer potential in pulsed RF bias processing

US Patent 9659757 · Granted May 23, 2017

Estimated economic value: $39,116,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for preparing all-solid-state photonic crystal fiber preforms by extrusio2022
Method and apparatus for actively tuning a plasma power source2022
Methods and systems for monitoring input power for process control in semiconduc2022
Plasma ignition circuit2022
Articulated direct-mount inductor and associated systems and methods2021
Dielectric barrier discharge reactor for catalytic nonthermal plasma production 2021
Edge ring assembly for improving feature profile tilting at extreme edge of wafe2020
Method and apparatus for gas abatement2020
Inductive current sensor on printed circuit board2020
Arcing detection apparatus for plasma processing2020
Compact subnanosecond high voltage pulse generation system for cell electro-mani2019
Source RF power split inner coil to improve BCD and etch depth performance2019