Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › SRAM design to facilitate single fin cut in double sidewall image transfer process

SRAM design to facilitate single fin cut in double sidewall image transfer process

US Patent 9564446 · Granted Feb 7, 2017

Estimated economic value: $2,910,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Two-color self-aligned double patterning (SADP) to yield static random access me2025
Two-color self-aligned double patterning (SADP) to yield static random access me2024
SRAM design to facilitate single fin cut in double sidewall image transfer proce2024
SRAM design to facilitate single fin cut in double sidewall image transfer proce2024
Two-color self-aligned double patterning (SADP) to yield static random access me2023
Testing SRAM structures2022
Two-color self-aligned double patterning (SADP) to yield static random access me2021
SRAM cell with dynamic split ground and split wordline2021
Buried contact to provide reduced VFET feature-to-feature tolerance requirements2020
Buried contact to provide reduced VFET feature-to-feature tolerance requirements2020
SRAM cell with dynamic split ground and split wordline2020
SRAM cell with dynamic split ground and split wordline2020