Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Mask shrink layer for high aspect ratio dielectric etch

Mask shrink layer for high aspect ratio dielectric etch

US Patent 9543148 · Granted Jan 10, 2017

Estimated economic value: $16,626,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

High aspect ratio dielectric etch with chlorine2025
Selective attachment to enhance SiO2:SiNx etch selectivity2025
High density, modulus, and hardness amorphous carbon films at low pressure2025
Methods and systems for managing byproduct material accumulation during plasma-b2025
Profile optimization for high aspect ratio memory using an etch front metal cata2025
High aspect ratio etch with infinite selectivity2025
Multi-state RF pulsing to control mask shape and breaking selectivity versus pro2025
Multiple state pulsing for high aspect ratio etch2025
Multiple state pulsing for high aspect ratio etch2025
Process control for ion energy delivery using multiple generators and phase cont2025
Carbon based depositions used for critical dimension control during high aspect 2025
Multi-state pulsing for achieving a balance between bow control and mask selecti2025