Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Oxide-nitride-oxide stack having multiple oxynitride layers

Oxide-nitride-oxide stack having multiple oxynitride layers

US Patent 9355849 · Granted May 31, 2016

Estimated economic value: $5,842,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for providing enhanced recommendations based on ratings of off2025
Nonvolatile charge trap memory device having a high dielectric constant blocking2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Methods of equalizing gate heights in embedded non-volatile memory on HKMG techn2025
Method of forming oxide-nitride-oxide stack of non-volatile memory and integrati2025
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device2024
Method of ono integration into logic CMOS flow2024
Method of ono integration into logic CMOS flow2024
Memory transistor with multiple charge storing layers and a high work function g2024