Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Memory transistor with multiple charge storing layers and a high work function gate electrode

Memory transistor with multiple charge storing layers and a high work function gate electrode

US Patent 12009401 · Granted Jun 11, 2024

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

System and method for providing enhanced recommendations based on ratings of off2025
Nonvolatile charge trap memory device having a high dielectric constant blocking2025
Nonvolatile charge trap memory device having a high dielectric constant blocking2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Oxide-nitride-oxide stack having multiple oxynitride layers2025
Methods of equalizing gate heights in embedded non-volatile memory on HKMG techn2025
Executing gestures with active stylus2025
Differential sensing in an active stylus2025
Method of forming oxide-nitride-oxide stack of non-volatile memory and integrati2025
Silicon-oxide-nitride-oxide-silicon based multi-level non-volatile memory device2024
Hyper temporal lidar with dynamic shot scheduling using a laser energy model2024
Method of ono integration into logic CMOS flow2024