Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Extremely thin semiconductor-on-insulator (ETSOI) layer

Extremely thin semiconductor-on-insulator (ETSOI) layer

US Patent 9263517 · Granted Feb 16, 2016

Estimated economic value: $417,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Wraparound contact with reduced distance to channel2025
Stressed material within gate cut region2025
Composite material phase change memory cell2025
Looped long channel field-effect transistor2025
Self-aligned C-shaped vertical field effect transistor2025
Single-mask alternating line deposition2025
Fin-based and bipolar electrostatic discharge devices2024
Bipolar transistors2024
Self aligned replacement metal source/drain FINFET2024
Electrostatic discharge (ESD) device with improved turn-on voltage2024
Gate-all-around field effect transistor having multiple threshold voltages2024
Top via interconnect having a line with a reduced bottom dimension2024