Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vertical integrated circuit switches, design structure and methods of fabricating same

Vertical integrated circuit switches, design structure and methods of fabricating same

US Patent 8791778 · Granted Jul 29, 2014

Estimated economic value: $5,690,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Field effect transistor with shallow trench isolation features within source/dra2025
Heterojunction bipolar transistor with buried trap rich isolation region2025
High electron mobility transistors having barrier liners and integration schemes2025
Contact-over-active-gate transistor structures with contacts landed on enlarged 2025
Heterojunction bipolar transistor with buried trap rich isolation region2024
Field effect transistor2024
IC structure including porous semiconductor layer in bulk substrate adjacent tre2024
Semiconductor on insulator wafer with cavity structures2024
IC structure including porous semiconductor layer under trench isolation2024
Ultralow-K dielectric-gap wrapped contacts and method2024
Heterojunction bipolar transistors with stress material for improved mobility2024
Heterojunction bipolar transistor with emitter base junction oxide interface2023