Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside

Heat dissipation in temperature critical device areas of semiconductor devices by heat pipes connecting to the substrate backside

US Patent 8564120 · Granted Oct 22, 2013

Estimated economic value: $1,818,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Front-end-of-line device structure and method of forming such a front-end-of-lin2019
Low damage low-k dielectric etch2019
Method of fabricating semiconductors2018
Uniform, damage free nitride ETCH2017
Method of forming a semiconductor structure including silicided and non-silicide2017
Method of fabricating semiconductors2016
Uniform, damage free nitride etch2016
Hard mask for source/drain epitaxy control2015
Methods for fabricating integrated circuits with robust gate electrode structure2015
Method of forming a metal contact opening with a width that is smaller than the 2015
Multi-step deposition of a spacer material for reducing void formation in a diel2015
High-K metal gate electrode structures formed by cap layer removal without sacri2015