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Home › Method for using hybrid orientation technology (HOT) in conjunction with selective epitaxy to form semiconductor devices with regions of different electron and hole mobilities and related apparatus

Method for using hybrid orientation technology (HOT) in conjunction with selective epitaxy to form semiconductor devices with regions of different electron and hole mobilities and related apparatus

US Patent 8395216 · Granted Mar 12, 2013

Estimated economic value: $14,420,000 ⓘ

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