Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › High-temperature bias anneal of integrated circuits for improved radiation hardness and hot electron resistance

High-temperature bias anneal of integrated circuits for improved radiation hardness and hot electron resistance

US Patent 5516731 · Granted May 14, 1996

Estimated economic value: $18,901,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Thermal energy recovery systems for non-contact temperature detection of molten 2025
Paste container2025
Process for manufacturing a printed circuit board having high density microvias 2019
Thermal performance of logic chip in a package-on-package structure2018
Semiconductor package structure2018
Buried TSVs used for decaps2017
Stiffening electronic packages by disposing a stiffener ring between substrate c2017
System with a high power chip and a low power chip having low interconnect paras2017
Open solder mask and or dielectric to increase lid or ring thickness and contact2017
System, method, and computer program product for a cavity package-on-package str2017
Method and system for controlling a semiconductor fabrication process2017
Low-profile chip package with modified heat spreader2016