Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Lateral power MOSFET with high breakdown voltage and low on-resistance

Lateral power MOSFET with high breakdown voltage and low on-resistance

US Patent 8389341 · Granted Mar 5, 2013

Estimated economic value: $4,095,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Pixel package, method for forming the same, and display device using the same2025
Forming a larger display using multiple smaller displays2025
Flexible LED strip2025
Method of forming a transistor device with a gate structure having a pair of rec2024
Strained transistor with conductive plate2024
Dual gate structures for semiconductor devices2024
Method of making triple well isolated diode2024
Breakdown voltage capability of high voltage device2024
Method of storage space management for improving endurance of storage devices2024
Power MOSFETs structure2024
Image rendering device and image rendering method2024
Plate design to decrease noise in semiconductor devices2024