Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device

Wide bandgap device in parallel with a device that has a lower avalanche breakdown voltage and a higher forward voltage drop than the wide bandgap device

US Patent 8357976 · Granted Jan 22, 2013

Estimated economic value: $4,399,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for suppressing voltage overshoots2025
Shielded gate trench power MOSFET with high-k shield dielectric2025
Electronic device including a transistor structure2025
Electronic device including a transistor and a shield electrode2024
Power semiconductor device with reduced loss and manufacturing method the same2024
Integrated transistor and resistor-diode-capacitor snubber2024
Insulated gated field effect transistor structure having shielded source and met2024
Systems and methods for designing a discrete device product2024
Insulated gated field effect transistor structure having shielded source and met2023
Systems and methods for designing a discrete device product2022
Electronic device including a transistor and a shield electrode2022
Insulated gated field effect transistor structure having shielded source and met2022