Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Insulated gated field effect transistor structure having shielded source and method

Insulated gated field effect transistor structure having shielded source and method

US Patent 11222976 · Granted Jan 11, 2022

Estimated economic value: $32,440,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Method for suppressing voltage overshoots2025
Method and device system for producing feed stock of ethylene steam cracker and 2025
Electronic device including a transistor structure2025
Electronic device including a transistor and a shield electrode2024
Integrated transistor and resistor-diode-capacitor snubber2024
Insulated gated field effect transistor structure having shielded source and met2024
Insulated gated field effect transistor structure having shielded source and met2024
Method for preparing organic-inorganic hybrid nanoflower by electrodeposition2024
Method of preparing an organic-inorganic hybrid nanoflower2023
Insulated gated field effect transistor structure having shielded source and met2023
Insulated gated field effect transistor structure having shielded source and met2023
Production of algae-derived polyunsaturated fatty acids2022