Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

GaN substrate, epitaxial layer-provided substrate, methods of manufacturing the same, and method of manufacturing semiconductor device

US Patent 8283694 · Granted Oct 9, 2012

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Group III nitride composite substrate and method for manufacturing the same, and2021
Group III nitride composite substrate and method for manufacturing the same, and2021
Group III nitride composite substrate and method for manufacturing the same, and2021
Epitaxial film forming method, sputtering apparatus, manufacturing method of sem2020
Gallium nitride substrate2020
Group III nitride composite substrate and method for manufacturing the same, and2020
Group III nitride composite substrate and method for manufacturing the same, and2020
Group III nitride composite substrate and method for manufacturing the same, and2020
Gallium nitride substrate2019
Gallium nitride substrate2019
Group III nitride composite substrate and method for manufacturing the same, and2019
Group III nitride composite substrate and method for manufacturing the same, and2019