{"@context": "https://schema.org", "@type": "BreadcrumbList", "itemListElement": [{"@type": "ListItem", "position": 1, "name": "Home", "item": "https://www.patentleaderboard.com/"}, {"@type": "ListItem", "position": 2, "name": "Method for compensation of process-induced performance variation in a MOSFET integrated circuit", "item": "https://www.patentleaderboard.com/patent/8219961"}]}
Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Method for compensation of process-induced performance variation in a MOSFET integrated circuit

Method for compensation of process-induced performance variation in a MOSFET integrated circuit

US Patent 8219961 · Granted Jul 10, 2012

Estimated economic value: $3,650,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Stacked nanosheet device for process and performance optimization2025
Interconnects, inductors, transformers, and power architectures for circuits2025
Isolating ion implantation of silicon channels for integrated circuit layout2025
Adaptive row patterns for custom-tiled placement fabrics for mixed height cell l2024
Self-limiting manufacturing techniques to prevent electrical shorts in a complem2024
Self-limiting manufacturing techniques to prevent electrical shorts in a complem2024
Josephson junction structures2024
Power routing for 2.5D or 3D integrated circuits including a buried power rail a2024
Power routing for 2.5D or 3D integrated circuits including a buried power rail a2024
Power harvesting for integrated circuits2024
Forming a wrap-around contact to connect a source or drain epitaxial growth of a2024
Forming a wrap-around contact to connect a source or drain epitaxial growth of a2024