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Home › Forming a wrap-around contact to connect a source or drain epitaxial growth of a complimentary field effect transistor (CFET) to a buried power rail (BPR) of the CFET

Forming a wrap-around contact to connect a source or drain epitaxial growth of a complimentary field effect transistor (CFET) to a buried power rail (BPR) of the CFET

US Patent 11915984 · Granted Feb 27, 2024

Estimated economic value: $167,423,000 ⓘ

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