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Home › III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates

III-V nitride homoepitaxial material of improved quality formed on free-standing (Al,In,Ga)N substrates

US Patent 8212259 · Granted Jul 3, 2012

Estimated economic value: $4,921,000 ⓘ

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