Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

Vanadium compensated, SI SiC single crystals of NU and PI type and the crystal growth process thereof

US Patent RE48378 · Granted Jan 5, 2021

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Microwave oven with integrated lower surface heating plate2025
Optically-finished thin diamond substrate or window of high aspect ratio and a m2025
Universal access layer for accessing heterogeneous data stores2024
Distributed processing to provide transparency in rate determination2024
System, method, and computer program product for segmenting accounts2024
Phase-gate hybrid coating crisp plate2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon car2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon car2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon car2024
Vanadium-compensated 4H and 6H single crystals of optical grade, and silicon car2024
Canonical model for product development2024
Method for preparing an aluminum doped silicon carbide crystal by providing a co2024