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Home › Integration of high-k metal gate stack into direct silicon bonding (DSB) hybrid orientation technology (HOT) pMOS process flow

Integration of high-k metal gate stack into direct silicon bonding (DSB) hybrid orientation technology (HOT) pMOS process flow

US Patent 7943479 · Granted May 17, 2011

Estimated economic value: $6,590,000 ⓘ

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