Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices

Design of silicon-controlled rectifier by considering electrostatic discharge robustness in human-body model and charged-device model devices

US Patent 7763908 · Granted Jul 27, 2010

Estimated economic value: $2,937,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Electrostatic discharge protection circuit having high allowable power-up slew r2015
I/O and power ESD protection circuits by enhancing substrate-bias in deep-submic2012
I/O and power ESD protection circuits by enhancing substrate-bias in deep-submic2011
Circuit protection system2010
I/O and power ESD protection circuits by enhancing substrate-bias in deep-submic2009
Electrostatic discharge series protection2009
Bias for electrostatic discharge protection2008
Electrostatic discharge testing2008
Optimization of NMOS drivers using self-ballasting ESD protection technique in f2008
Implantation method to improve ESD robustness of thick gate-oxide grounded-gate 2006
Substrate-biased I/O and power ESD protection circuits in deep-submicron twin-we2005
Input and power protection circuit implemented in a complementary metal oxide se2002