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Home › Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies

Implantation method to improve ESD robustness of thick gate-oxide grounded-gate NMOSFET's in deep-submicron CMOS technologies

US Patent 7119405 · Granted Oct 10, 2006

Estimated economic value: $5,189,000 ⓘ

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