Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Forming ultra dense 3-D interconnect structures

Forming ultra dense 3-D interconnect structures

US Patent 7745940 · Granted Jun 29, 2010

Estimated economic value: $12,144,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Vertically spaced intra-level interconnect line metallization for integrated cir2025
SRAM with P-type access transistors and complementary field-effect transistor te2025
Gate-to-gate isolation for stacked transistor architecture via selective dielect2025
Asymmetric gate structures and contacts for stacked transistors2025
Vertical integration scheme and circuit elements architecture for area scaling o2025
Backside contact structures and fabrication for metal on both sides of devices2025
Sideways vias in isolation areas to contact interior layers in stacked devices2025
Forming an oxide volume within a fin2025
Gate-all-around integrated circuit structures having removed substrate2025
Microelectronic assemblies2024
Stacked source-drain-gate connection and process for forming such2024
Interconnect techniques for electrically connecting source/drain regions of stac2024