Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors

Capacitor below the buried oxide of SOI CMOS technologies for protection against soft errors

US Patent 7388274 · Granted Jun 17, 2008

Estimated economic value: $10,894,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Radiation induced error detection in solid-state devices2025
Embedded heater in a phase change memory material2024
Radiation hardened flip-flop circuit for mitigating single event transients2023
Screening and culture method2022
Reducing error rates with alpha particle protection2021
Direct measurement test structures for measuring static random access memory sta2021
Non-uniform gate dielectric for U-shape MOSFET2021
Vertical field effect transistor with improved reliability2019
Vertical FET with reduced parasitic capacitance2019
Vertical field effect transistor with improved reliability2019
Vertical FET with reduced parasitic capacitance2019
Non-uniform gate dielectric for U-shape MOSFET2019