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Home › Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

US Patent 7335568 · Granted Feb 26, 2008

Estimated economic value: $8,371,000 ⓘ

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