Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material

Plasma dielectric etch process including ex-situ backside polymer removal for low-dielectric constant material

US Patent 7276447 · Granted Oct 2, 2007

Estimated economic value: $69,542,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Multi zone gas injection upper electrode system2023
Atomic layer etch of tungsten for enhanced tungsten deposition fill2021
Multi zone gas injection upper electrode system2020
Dielectric contact etch2018
Atomic layer etching of silicon nitride2018
Atomic layer etching of tungsten for enhanced tungsten deposition fill2018
Hydrogen activated atomic layer etching2017
Low-cost solar cell metallization over TCO and methods of their fabrication2017
Toll image review gamification2017
Air gap spacer integration for improved fin device performance2016
Integrated etch/clean for dielectric etch applications2016
Dual zone temperature control of upper electrodes2016