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Home › Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization

Apparatus and method for selected site backside unlayering of si, GaAs, GaxAlyAszof SOI technologies for scanning probe microscopy and atomic force probing characterization

US Patent 7205237 · Granted Apr 17, 2007

Estimated economic value: $6,339,000 ⓘ

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