Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

US Patent 7132701 · Granted Nov 7, 2006

Estimated economic value: $5,056,000 ⓘ

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Directed growth of electrically self-contacted monolayer transition metal dichal2022
Package including wires contacting lead frame edge2013
Wide bandgap device in parallel with a device that has a lower avalanche breakdo2013
Package including proximately-positioned lead frame2012
Rugged semiconductor device architecture2012
Contact method for thin silicon carbide epitaxial layer and semiconductor device2011
Contact method for thin silicon carbide epitaxial layer and semiconductor device2011
Contact method for thin silicon carbide epitaxial layer and semiconductor device2011
Wide bandgap device in parallel with a device that has a lower avalanche breakdo2010
Contact method for thin silicon carbide epitaxial layer and semiconductor device2009
Contact method for thin silicon carbide epitaxial layer and semiconductor device2009
Contact method for thin silicon carbide epitaxial layer and semiconductor device2009