Patent Leaderboard
USPTO Patent Rankings Data through Dec 31, 2025
Home › Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

Contact method for thin silicon carbide epitaxial layer and semiconductor devices formed by those methods

US Patent RE42423 · Granted Jun 7, 2011

Assignee

Inventors

View full patent text on Google Patents →

More Patents by These Inventors

Directed growth of electrically self-contacted monolayer transition metal dichal2022
Package including wires contacting lead frame edge2013
Wide bandgap device in parallel with a device that has a lower avalanche breakdo2013
Package including proximately-positioned lead frame2012
Rugged semiconductor device architecture2012
Wide bandgap device in parallel with a device that has a lower avalanche breakdo2010
Contact method for thin silicon carbide epitaxial layer and semiconductor device2009
Contact method for thin silicon carbide epitaxial layer and semiconductor device2009
Contact method for thin silicon carbide epitaxial layer and semiconductor device2009
Method and device with durable contact on silicon carbide2009
Wide bandgap device in parallel with a device that has a lower avalanche breakdo2009
Flexible dielectric film and method for making2008