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Home › Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

Method of forming doped regions in the bulk substrate of an SOI substrate to control the operational characteristics of transistors formed thereabove, and an integrated circuit device comprising same

US Patent 7129142 · Granted Oct 31, 2006

Estimated economic value: $12,737,000 ⓘ

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